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With $18 million from the National Science Foundation (NSF) and additional support from the Army Research Laboratory, the University of Arkansas has broken ground on a national silicon carbide (SiC) research and fabrication center. SiC is a powerful semiconductor that excels in higher temperature environments and holds potential for various applications, including military and general electronic devices.
The first phase of MUSiC (Multi-User SiC), a built-out existing cleanroom laboratory, begins operations next year. Construction of the new building is expected to be completed by January 2025, allowing the full MUSiC Research and Fabrication Facility to open, said Distinguished Prof. Alan Mantooth, who is leading the project.
The facility will address the lack of domestic production of ICs made with SiC, as existing U.S. fabrication facilities are limited to internal use only. This new open-access facility at the Arkansas school will be the first of its kind in the U.S., providing external engineering researchers opportunities for prototyping, demonstrations and device design.
The NSF funding will cover infrastructure, equipment and technology installation, as well as support staff and researchers. By combining the university’s decades of experience in SiC research with cutting-edge equipment, the facility aims to produce superior ICs for lighter, faster and more energy-efficient electronic systems that can function in extreme temperatures.
The facility’s potential applications range from military and industrial systems to electronics for cars, heavy transportation, construction equipment, and even geothermal and space exploration. In addition to research advancements, the facility will play a crucial role in training the next generation of semiconductor researchers and engineers, exposing students to a high-need area of science and technology.
Co-principal investigators for the project are Greg Salamo, distinguished professor of physics, Zhong Chen, associate professor of electrical engineering, Shannon Davis, business and operations manager in the Department of Electrical Engineering, and John Ransom, former director of SiC technology at X-FAB in Lubbock, Texas. Ransom will direct the MUSiC Research and Fabrication Facility.
Overall, the establishment of this national facility has the potential for significant national impact, propelling the U.S. to the forefront of SiC semiconductor design and fabrication and advancing game-changing technologies for various industries.
In an interview with EE Times, Mantooth said establishing the facility at the University of Arkansas will address the current void in IC production in the U.S. in several ways:
- Workforce training: The MUSiC facility will train the next generation of semiconductor researchers and engineers, providing education and expertise in both silicon and SiC semiconductor technologies. This will help to develop a skilled workforce that can support the onshoring of semiconductor manufacturing, helping to fill the talent gap created when domestic suppliers offshored manufacturing in the past.
- Low-volume manufacturing capability: The facility will offer a reasonably-priced, low-volume manufacturing capability for SiC ICs and power devices. This will fill a gap in the U.S. manufacturing landscape, providing a platform for researchers, startups and other companies to pilot and evaluate new devices, circuits, equipment and fabrication flows beyond the sample-level output typically provided by university labs. While not intended for high-volume production, the goal is to achieve process compatibility with high-volume manufacturers, making it easier for researchers to transition from low-volume prototypes to higher volume production facilities when moving toward commercialization.
- Accelerated R&D: The facility will serve as a crucial bridge for university and industry research in SiC fabrication and device technology. It will facilitate the technology transition from ideas to proof-of-concept to functional prototypes, unlocking creativity and fostering innovation in the SiC research community. This environment is designed to be inclusive, inviting researchers from within the U.S. and internationally to collaborate and contribute to advancements in the field.
Advantage: SiC
The key advantages of SiC as a semiconductor material compared with traditional silicon are rooted in its unique material properties. SiC excels as a power semiconductor due to its ability to switch faster with lower losses. This allows for the development of lighter, more electrically efficient systems in electrified transportation (e.g., planes, trains, autos and drones) and reduces the need for aggressive thermal management.
Additionally, SiC can operate at much higher temperatures than silicon, presenting opportunities for sensing, controlling and monitoring systems that were previously impractical with traditional silicon-based semiconductors. Moreover, SiC’s capability to function at higher voltages makes it appealing for electric power grid modernization and high-power applications.
Historically, the main challenge limiting the use of SiC as a fully developed semiconductor has been the difficulty in growing defect-free starting wafers. While engineers have perfected the quality of silicon material, allowing for large-scale manufacturing with minimal defects, SiC wafers have faced limitations in this regard.
“The development of SiC wafers at 8-inch diameters is ongoing due to the need to manage defects, making SiC manufacturing more expensive compared to silicon,” Mantooth said. “However, as technology advances and economies of scale are achieved, SiC is expected to become more cost-effective, further driving its adoption in various applications.”
SiC manufacturing
Designing and fabricating SiC ICs presents distinct challenges compared with those made with silicon, according to Mantooth. In silicon, dopants can diffuse under reasonable process temperatures, allowing for precise control of junction depths, carrier density and mobility. However, in SiC, dopants are less mobile and their diffusion is limited, requiring multiple implants to achieve the desired doping profile and depth. This results in additional steps and higher costs.
Moreover, the energy required for these implants prevents the direct application of the self-aligned gate technology used in silicon. Because of this, SiC-integrated circuits can only have features that are about 1 micrometer in size. These devices have a higher inherent capacitance and work at lower frequencies than silicon devices.
While many fabrication steps remain similar for SiC and silicon, accommodating SiC’s unique material properties necessitates higher temperature processing and the development of alternative techniques to work around its limitations. For instance, annealing the wafers after implantation requires extremely high temperatures, reaching up to 1,850 degrees Celsius (3,362 degrees Fahrenheit).
“Despite these challenges, the establishment of a national silicon carbide research and fabrication facility at the University of Arkansas promises to accelerate advancements in SiC-integrated circuits and contribute to the development of cutting-edge technologies in various fields,” Mantooth said.
Applications and next steps
SiC-based devices and ICs offer significant advantages in both military and industrial applications. In the military sector, SiC is used in hybrid or fully electric vehicles, drones, radar systems, weaponry, ship-to-shore grid connections and more. Its superior properties, such as high-temperature operation and faster switching with lower losses, make SiC-based devices ideal for demanding military applications.
In industrial settings, SiC-based devices are employed for health monitoring of industrial processes and equipment, as well as industrial control of high-temperature processes like chemical and electrical operations. For instance, SiC is used in natural gas turbines for health monitoring, and it can also be applied to aircraft engines, diesel engines, and other systems for sensing and control purposes.
Ongoing research efforts in the field of SiC hold promise for breakthroughs and advancements. Innovations in new devices, materials and wafer development processes to achieve higher quality starting materials are particularly exciting.
“New materials and wafer-development processes to achieve higher quality starting materials are exciting,” Mantooth said. “The growth of the SiC electronics ecosystem from fab to design, CAD tools and products is amazing.”
Looking ahead, the future of SiC semiconductor technology is envisioned to follow a two-fold path: SiC is expected to supplant silicon in applications where its superior performance enables significant system-level benefits, leading to its adoption in various industries, according to Mantooth. Additionally, SiC will open up new areas of electronics penetration where silicon-based solutions fall short, creating new markets and possibilities.
The advancement and widespread adoption of SiC semiconductor technology are expected to revolutionize various industries, enabling more efficient and high-performance electronic systems, while also paving the way for novel applications and advancements in the field.
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